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| NANOMATERIALS AND NANOTECHNOLOGY | |
| ArticleName | ESTIMATING ANALYSIS OF CONDITIONS FOR DEFECT–FREE QUANTUM DOTS FORMATION IN InxGa1–xAs/GaAs HETEROSTRUCTURES |
| ArticleAuthor | R.Kh. Akchurin, N.T. Vagapova |
| ArticleAuthorData | R.Kh. Akchurin, N.T. Vagapova, Moscow State Academy of Fine Chemical Technology |
| Abstract | Based on the energy balance model we have calculated the critical thicknesses of misfit dislocations formation and the 2D-3D transition by Stranski—Krastanov mechanism for InxGa1-xAs/GaAs growth. The limits of these parameters and the range of solid solution compositions allowing the growth of defect-free quantum dots have been estimated. |
| keywords | Heterostructure, quantum dots, epitaxial growth, Stranski—Krastanov mechanism, InxGa1-xAs/ GaAs. |
| Language of full-text | russian |
| Full content | Buy |
